Electrophysical and Structural Properties of n-ZnS/P-CdTe Heterojunctions

Author(s) D.I. Kurbatov , N.M. Opanasyuk, A.S. Opanasyuk , V.V. Kosyak
Affiliations

Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine

Е-mail kurd@ukr.net
Issue Volume 1, Year 2009, Number 3
Dates Received 18.11.2009, in final form 11.12.2009
Citation D.I. Kurbatov, N.M. Opanasyuk, A.S. Opanasyuk, V.V. Kosyak, J. Nano- Electron. Phys. 1 No3, 25 (2009)
DOI
PACS Number(s) 61.05.cp, 68.37.Hk, 73.40.Lg, 73.61.Ga
Key words II-VI films, Heterojunction (4) , Solid solutions, Crystal structure (6) , Scanning electron microscopy (14) , Ideality factor (9) , Potential barrier, Charge-transport mechanism.
Annotation
Electrophysical and structural properties of ZnS/CdTe film heterojunctions obtained by the sublimation method in quasi-closed volume at different growth conditions have been studied in this work. As a result, the ideality factors, saturation currents, potential barriers and the charge-transport mechanisms of these heterostructures are found. Structural investigations allowed to determine the texture type of the films, their phase composition, the lattice parameters, and the dependence of these parameters on the growth conditions as well. Shown, that on the interface of heterosystems obtained at the substrate temperatures Ts > 773 К the solid solutions with certain chemical composition are formed.

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