Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs

Author(s) Amit Chaudhry1, Sonu Sangwan2, Jatindra Nath Roy3
Affiliations

1 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

2 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

3 Solar Semiconductor Private Limited, Hyderabad, India

Е-mail amit_chaudhry01@yahoo.com
Issue Volume 3, Year 2011, Number 4
Dates Received 11 August 2011, published online 30 December 2011
Citation Amit Chaudhry, Sonu Sangwan, Jatindra Nath Roy, J. Nano- Electron. Phys. 3 No4, 27 (2011)
DOI
PACS Number(s) 85.30.De, 85.30.Tv
Key words Mobility (8) , Strained–Si, Model (36) , Numerical (5) .
Annotation
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The results show that the threshold voltage falls and drain current rises due to applied uniaxial strain. The results have also been compared with the experimentally reported results and show good agreement.

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