Purification of the Cd(Mn)Te For X-ray Detector Crystals by Special Annealing

Author(s) Z. Zakharuk1, S. Dremlyuzhenko1, S. Solodin1, E. Nykonyuk2, , B. Rudyk2, O. Kopach1, A. Opanasyuk3 , P. Fochuk1
Affiliations

1 Chernivtsi National University, 2, Kotziubynskogo Str., 58012 Chernivtsi, Ukraine,

2 National University of Water and Environmental Engineering, 11, Soborna Str., 33000 Rivne, Ukraine,

3 Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail semirivne@gmail.com, opanasyuk_sumdu@ukr.net, p.fochuk@chnu.edu.ua
Issue Volume 9, Year 2017, Number 6
Dates Received 15 September 2017; revised manuscript received 26 October 2017; published online 15 November 2017
Citation Z. Zakharuk, S. Dremlyuzhenko, et al., J. Nano- Electron. Phys. 9 No 6, 06004 (2017)
DOI 10.21272/jnep.9(6).06004
PACS Number(s) 71.55.Eq, 72.80.Ey
Key words Solid solutions Cd1 – xMnxTe, Purification, Electrical characteristics, Optical measurements, Inclusions (2) , Thermal treatment.
Annotation To purify Cd0,95Mn0,05Te ingots a modified travelling heater method (called «dry zone») was applied. Even one pass of the zone decreased essentially Te inclusions (size and density) in the ingot. The p-type conductivity and others electrical characteristics of the material almost didn’t change, however the concentration of shallow (А ≈ 0.05 еV) acceptors reduced and the compensation degree of deeper acceptors (А ≈ 0.17 еV) increased. Such transformation of a defect-impurity system was manifested in decreasing of the ionized centers’ concentration and in reducing of impurities absorption coefficients both at 0.1-0.5 eV and near the edge of fundamental band.

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