Effect of Electron Irradiation on Conductivity Anisotropy in n-InSe

Author(s) Z.D.Kovalyuk, I.V. Mintyanskii, P.I. Savitskii

The I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Branch, 5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine

Е-mail illya.mintyanskyy@gmail.com
Issue Volume 9, Year 2017, Number 6
Dates Received 19 September 2017; revised manuscript received 15 November 2017; published online 24 November 2017
Citation Z.D.Kovalyuk, I.V. Mintyanskii, P.I. Savitskii, J. Nano- Electron. Phys. 9 No 6, 06013 (2017)
DOI 10.21272/jnep.9(6).06013
PACS Number(s) 72.20.Dp, 72.20.Fr
Key words Indium selenide, Electron irradiation (2) , Conductivity anisotropy, Interlayer barrier, Two-dimensional electron gas.
Annotation For crystals n-InSe before and after electron irradiation the conductivity anisotropy and across the layers charge transfer mechanism are investigated in the temperature range 80 to 400 K. It is established that the anisotropy ratio, being initially high and slightly dependent on temperature, considerably increases and exponentially changes with temperature after the e-irradiation. The results are explained by the presence of planar defects, which promote the formation of potential barriers between the layers. Along with the three-dimensional electrons thermally activated or tunneled at charge transport across the layers, the two-dimensional ones affecting only the longitudinal conductivity are taken into account. It follows from the numerical calculations that the latter contribution becomes more essential after the irradiation.


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