Formation of Filamentary Structures of Oxide on the Surface of Monocrystalline Gallium Arsenide

Author(s) S.O. Vambol1, I.T. Bohdanov2, V.V. Vambol1, Y.O. Suchikova2, O.M. Kondratenko1, T.P. Nestorenko1, S.V. Onyschenko2

1 National University of Civil Defense of Ukraine, 94, Chernyshevskaya, Str., 61023 Kharkiv, Ukraine

2 Berdyansk State Pedagogical University, 4, Schmidt Str., 71100 Berdyansk, Ukraine

Issue Volume 9, Year 2017, Number 6
Dates Received 11 July 2017; published online 24 November 2017
Citation S.O. Vambol, I.T. Bohdanov, V.V. Vambol, et al., J. Nano- Electron. Phys. 9 No 6, 06016 (2017)
DOI 10.21272/jnep.9(6).06016
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Key words Gallium Arsenide, Semiconductor (56) , Nanowires (9) , Electrochemical Etching, Electrolyte (2) .
Annotation The method of forming filamentary oxide nanocrystals on a surface of monocrystalline gallium arsenide. Nanowires were formed by electrochemical etching in hydrochloric acid and methyl. Reviewed morphological properties of the structures and the possibility of their use as gas sensors. The stability properties of nanowires is ensured by the oxide phase at their tops and on the surface. The slope of the nanowires is explained on the basis of the stability of crystallographic planes of their faces.


English version of article