Influence of Characteristic Energies and Charge Carriers Mobility on the Performance of a HIT Solar Cell

Author(s) Wassila Leila Rahal1, Djaaffar Rached2
Affiliations

1 Laboratoire d’Analyse et d’Application des Rayonnements, U.S.T.O.M.B. - B.P., 1505 El M’naouar, Oran, Algérie

2 Laboratoire de Physique des plasmas, Matériaux Conducteurs et leurs Applications, U.S.T.O.M.B. - B.P., 1505 El M’naouar, Oran, Algérie

Е-mail wassilaleila@hotmail.com, djaaffar31@yahoo.fr
Issue Volume 9, Year 2017, Number 4
Dates Received 31 March 2017; revised manuscript received 25 July 2017; published online 27 July 2017
Citation Wassila Leila Rahal, Djaaffar Rached, J. Nano- Electron. Phys. 9 No 4, 04001 (2017)
DOI 10.21272/jnep.9(4).04001
PACS Number(s) 73.61.Jc, 71.20.Mq, 88.40.hj, 88.40.jj
Key words HIT solar cell (2) , Amorphous silicon (4) , Crystalline silicon (8) , Characteristics energies, Band tails, Mobility (8) , ASDMP.
Annotation In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Intrinsic Thin layer) based on amorphous silicon / crystalline silicon are studied. First, we study the influence of the valence band tail width (characteristic energy ED) and the conduction band tail width (characteristic energy EA) of hydrogenated amorphous silicon [1]. Then we analyze the effect of electrons mobility n and holes mobility p in the emitter of the structure ITO/p-a-Si:H /i-pm-Si:H /n-c-Si/Al. Our results show that a decrease of ED in the p-a-Si: H layer decreases the donors density of states in the gap, as well as holes recombination in this layer. However, no amelioration is observed when EA decreases. Furthermore, we show that increasing the mobility of charge carriers n and p, enhance the performance of the studied solar cells.

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