Photoelectric Signal Conversion in Deep p-n Junction for Detection of Carbon Nanotubes with Adsorbed SDBS in Aqueous Solution

Author(s) A.I. Manilov1,3, A.V. Kozinetz1, I.V. Gavrilchenko1,3, Y.S. Milovanov1,3, T.M. Mukhamedzhanov1,2, S.A. Alekseev2,3, M. Al Araimi4,5, S.V. Litvinenko1,3, A. Rozhin4, V.A. Skryshevsky1,3
Affiliations

1 Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska Str., 01033 Kyiv, Ukraine

2 Chemical Faculty, Taras Shevchenko National University of Kyiv, 64, Volodymyrska Str., 01033 Kyiv, Ukraine

3 Corporation Science Park Taras Shevchenko University of Kyiv, 60, Volodymyrska Str., 01033 Kyiv, Ukraine

4 Nanotechnology Research Group, Aston Institute of Photonic Technologies, School of Engineering & Applied Science, Aston University, Aston Triangle, B4 7ET Birmingham, UK

5 Engineering Department, Al Musanna College of Technology, Muladdah Musanna, Sultanate of Oman

Е-mail anmanilov@univ.kiev.ua
Issue Volume 9, Year 2017, Number 4
Dates Received 13 June 2017; published online 27 July 2017
Citation A.I. Manilov, A.V. Kozinetz, I.V. Gavrilchenko, et al., J. Nano- Electron. Phys. 9 No 4, 04020 (2017)
DOI 10.21272/jnep.9(4).04020
PACS Number(s) 68.08.p, 82.47.Rs, 81.07.De
Key words Sensor (21) , Carbon nanoparticles, Photocurrent (2) , Surface recombination rate, Deep p-n junction.
Annotation The possibility of using the principle of photoelectric conversion in structures with a deep p-n junction to control the content of carbon nanotubes with adsorbed surfactant (SDBS) in an aqueous solution was shown. Experimental studies of the analyte influence on the change in the photocurrent through a deep p-n junction were carried out. A shift in the dependence of the photocurrent on the voltage applied to the surface of the sensor structure due to the presence of carbon nanotubes in the solution was recorded. The change in the effective recombination rate, which corresponds to the distribution of the photocurrent at the surface, can be attributed to a change in the near-surface band bending.

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