Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates

Author(s) C.K. Sumesh1, K.D. Patel2 , V.M. Pathak2 , R.Srivastava2
Affiliations

1 Department of Physics, Charotar Institute of Technology, Charusat, Changa, 388 420, Anand, India

2 Department of Physics, Sardar patel University, V.V. Nagar, 388 120, Anand, India

Е-mail cksumesh.cv@ecchanga.ac.in
Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, published online 17 October 2011
Citation C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava, J. Nano- Electron. Phys. 3 No1, 709 (2011)
DOI
PACS Number(s) 85.30.Tv, 85.30.Kk, 73.40.Ei
Key words MoSe2 (2) , MESFET (2) , Ohmic contact (5) , Schottky contact (5) , I-V analysis.
Annotation
Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials.

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