Effect of the Magnetron Sputtering Parameters on the Structure andSubstructural Characteristics of Tantalum Diboride Films

Author(s) A.A. Goncharov, A.N. Yunda, I.V. Shelest,  V.V. Buranich
Affiliations

Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail o.goncharov@mss.sumdu.edu.ua
Issue Volume 9, Year 2017, Number 4
Dates Received 25 April 2017; revised manuscript received 25 July 2017; published online 27 July 2017
Citation A.A. Goncharov, A.N. Yunda, I.V. Shelest,  V.V. Buranich, J. Nano- Electron. Phys. 9 No 4, 04014 (2017)
DOI 10.21272/jnep.9(4).04014
PACS Number(s) 68.35. – p, 68.55.A –, 68.60.Bs, 81.07.Bc, 81.15.Cd
Key words Magnetron sputtering (9) , Tantalum diboride, Bias potential, Structure (86) , Nanohardness, Elastic modulus.
Annotation The effect of the RF- and DC-magnetron sputtering parameters on the structure and substructural characteristics of protective coatings based on tantalum diboride thin films was studied in this work.The results of the studies showed that the sign and magnitude of the applied bias potential at the use of both types of magnetron sputtering (RF and DC) have a crucial effect on the structure and substructural properties of tantalum diboride films. It was established that nanocrystalline tantalum diboride films of the overstoichiometric composition (CВ/CТа ≈ 2.2-2.6) and having strong growth texture in plane (00.1) were obtained at the bias potential of + 50 V and – 50 V in the RF- and DC-magnetron sputtering respectively. Thus obtained films had the best physico-mechanical properties and general substructural characteristic quantities: nanocristallites size of ~ 30 nm, and increased value of «c» parameter compared with the tabulated.

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