Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations

Author(s) F.A. Ptashchenko
Affiliations

State University “Odessa Maritime Academy”, 8, Didrikhson Str., 65029 Odessa, Ukraine

Е-mail fed.ptas@gmail.com
Issue Volume 9, Year 2017, Number 4
Dates Received 03 April 2017; published online 27 July 2017
Citation F.A. Ptashchenko, J. Nano- Electron. Phys. 9 No 4, 04010 (2017)
DOI 10.21272/jnep.9(4).04010
PACS Number(s) 68.43.Bc, 82.65._r
Key words Ab initio calculations, Adsorption (6) , NO2 (4) , Porous silicon (2) , Surface doping.
Annotation The paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated silicon surface can lead only to the effective destruction of the dimer N2O4. Reversible increase in the concentration of free holes can be explained by adsorption of NO2 molecules on the surface hydroxyl groups.

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