CdTe Based X/γ-ray Detector with MoOx Contacts

Author(s) O.L. Maslyanchuk1, M.M. Solovan1, V.V. Brus1,2, E.V. Maistruk1, S.V. Solodin1

1 Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskii Str., 58012 Chernivtsi, Ukraine

2 Institute for Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany

Issue Volume 9, Year 2017, Number 3
Dates Received 12 April 2017; revised manuscript received 20 April 2017; published online 30 June 2017
Citation O.L. Maslyanchuk, M.M. Solovan, V.V. Brus, et al., J. Nano- Electron. Phys. 9 No 3, 03035 (2017)
DOI 10.21272/jnep.9(3).03035
PACS Number(s) 71.55.Gs, 73.30. + y
Key words CdTe (7) , MoOx, Radiation detector, Schottky diodes (2) , Charge transport, Space-charge-limited currents.
Annotation The electrical characteristics of the Mo-MoOx/р-CdTe/MoOx-Mo heterostructures, manufactured by magnetron sputtering of molybdenum oxide thin films on CdTe semi-insulating crystals produced by Acrorad Co. Ltd were studied. Optimization of substrate conditions pretreatment and contacts deposition allowed to reduce the dark current of the detectors compared with earlier analogs and, consequently, to improve its spectrometric characteristics. The charge transport mechanisms for ensuring the low values of reverse currents in the structures were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and currents limited by the space charge at high voltages. It is shown that the heterostructure Mo-MoOx/р-CdTe/MoOx-Mo can be used for practical applications in the X- and -ray detectors.