Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film

Author(s) M. Ghougali1,2,3 , O. Belahssen1,2 , A. Chala1,2
Affiliations

1 Material Sciences Department, Faculty of Science, University of Biskra, Algeria

2 Physic Laboratory of Thin Films and Applications (LPCMA), University of Biskra, Algeria

3 Laboratory of exploitation and valorization the azalea energetics sources (LEVRES), Faculty of exact Science, University of El-Oued, Algeria

Е-mail belahssenokba@gmail.com
Issue Volume 9, Year 2017, Number 3
Dates Received 19 March 2017; revised manuscript received 15 May 2017; published online 30 June 2017
Citation M. Ghougali, O. Belahssen, A. Chala, J. Nano- Electron. Phys. 9 No 3, 03043 (2017)
DOI 10.21272/jnep.9(3).03043
PACS Number(s) 73.61. – r, 78.20. – e, 78.66. – w
Key words NiO thin films (3) , XRD (46) , Optical constants (6) , Electrical conductivity (8) .
Annotation Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the average of the crystalline size of the deposited thin films was calculated using Debye–Scherer formula and found 46.62 for as-deposited sample and 119.89 nm for the annealed one. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging ranging 3.64 for as-deposited sample and 2.98 eV for the annealed one. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.09241 (·cm)−1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.

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