PbS-ZnO Solar Cell: A Numerical Simulation

Author(s) Jaymin Ray1, Tapas K. Chaudhuri2, Chetan Panchal3, Kinjal Patel1, Keyur Patel4, Gopal Bhatt4, Priya Suryavanshi3
Affiliations

1 Department of Physics, Uka Tarsadiya University, Bardoli, Dist. Surat, Guajrat 394120, India

2 Department of Physics, SVNIT, Surat, Gujarat 395007, India

3 Applied Physics Department, M.S. University of Baroda, Vadodara, Gujarat 390001, India

4 Science and Humanity Department, BITS Education Campus, Vadodara, Gujarat 390001, India

Е-mail jayminray@gmail.com
Issue Volume 9, Year 2017, Number 3
Dates Received 28 April 2017; revised manuscript received 10 May 2017; published online 30 June 2017
Citation Jaymin Ray, Tapas K. Chaudhuri, Chetan Panchal, et al., J. Nano- Electron. Phys. 9 No 3, 03041 (2017)
DOI 10.21272/jnep.9(3).03041
PACS Number(s) 78.20.Bh, 73.40.Lq, 84.60.Jt
Key words PbS Thin Film, Numerical Simulation (3) , Current-Voltage characteristic (9) , QE analysis.
Annotation Nanoscale PbS, especially quantum dots (QDs) are of interest in applications, such as, solar cells and photodetectors because of tunability of band gap from 0.5 to 3 eV. Recently, ZnO/PbS solar cells with 8.55 % conversion efficiency have been reported with films made deposited from ligand exchanged PbS QDs. However, nanocrystalline PbS is easier to fabricate than QDs. This paper reports theoretical investigation into the use of nanocrystalline PbS in place of QDs as solar cell absorber. Solar cells with a structure of SLG/ITO/ZnO or CdS/PbS/Al was simulated using SCAPS software. We have used two n-type materials one is ZnO and second is CdS. The comparative simulated device performance was studied by current-voltage (I-V) characteristics and quantum efficiency (QE). The final results reveal a power conversion efficiency of 18.5 % for solar cells with p-PbS as absorber and n-ZnO as buffer and 16.8 % for n-CdS buffer layer.

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