A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon

Author(s) B.P. Modi
Affiliations Department of Physics, Veer Narmad South Gujarat University, Surat-395 007, Gujarat, India
Е-mail bharatpmodi@gmail.com
Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, published online 17 October 2011
Citation B.P. Modi, J. Nano- Electron. Phys. 3 No1, 680 (2011)
DOI
PACS Number(s) 73.30 + y, 73.20 – r
Key words Schottky barrier height, Metal-semiconductor interface, Current-voltage characteristics (3) , Thermionic emission, Ideality factor (9) , Lateral inhomogeneties in SBH.
Annotation
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height Φbe increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms.

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