Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer

Author(s) Ashutosh Kumar1 , Ashish Kumar1 , K. Asokan2, V. Kumar1 , R. Singh1

1 Indian Institute of Technology, Delhi Hauz Khas, 110016, New Delhi, India

2 Inter University Accelerator Centre, Arun Asif Ali Marg, 110067, New Delhi, India

Е-mail vkmr@physics.iitd.ac.in, kasokan@iuac.ac.in
Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, published online 17 October 2011
Citation Ashutosh Kumar, Ashish Kumar, K. Asokan, V. Kumar, R. Singh, J. Nano- Electron. Phys. 3 No1, 676 (2011)
PACS Number(s) 73.50.Td, 73.61.Ey, 72.20.Jv, 73.40.Cg
Key words 1/f noise, Spectral power density, Voltage fluctuations, Ohmic contacts (2) , Traps (2) , Temperature (30) .
1/f noise investigation was performed on n-GaN epitaxial layer grown on sapphire. The variation of spectral power density of voltage fluctuations density was observed as a function of frequency (100-50 Hz) and it showed the 1/f spectra. This type of behavior was attributed to the presence of traps. The variation in spectral power density of voltage fluctuations with temperature was also observed with in the temperature range 80 K and 300 K and it was found to be slightly increasing with temperature. It was attributed to the trapping-detrapping process of charge carriers by the defects. Four probe configuration was used for noise measurement and contacts were made with indium. To check the stability and ohmic behavior of contacts, I-V measurements were performed with in the temperature range 80-325 K.