Formation InAs Quantum Dots in a Matrix GaAs in Kinetic Mode for CVD-method

Author(s) S.K. Guba
Affiliations

Lviv Polytechnic National University, 12, S. Bandery St., 79013 Lviv, Ukraine

Е-mail gubask@polynet.lviv.ua
Issue Volume 9, Year 2017, Number 3
Dates Received 14 February 2017; revised manuscript received 27 February 2017; published online 30 June 2017
Citation S.K. Guba, J. Nano- Electron. Phys. 9 No 3, 03026 (2017)
DOI 10.21272/jnep.9(3).03026
PACS Number(s) 68.65. Hb, 81.10.Aj
Key words Quantum dot (11) , Self-organization (5) , Kinetic regime, CVD-metod.
Annotation We present the results of theoretical study for the kinetic mode of quantum dot formation in the InAs / GaAs system. The theory is valid at the kinetic stage of quantum dot formation, when the island ensemble remains dilute and thus noninteracting. The estimating characteristics of the kinetics formation of InAs quantum dot in the matrix GaAs, and their structural properties at CVD-method. The calculated results can be used to analyze technology heteronanostructures In1 – xGaxAs/InAs/GaAs for CVD-method. Moreover they are useful for modeling the structural properties of InAs quantum dot in the system InAs/GaAs.

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