Influence of Surface Processing Si on the Electrical Properties of Heterostructures p-NiO/n-Si

Author(s) H.P. Parkhomenko, M.M. Solovan , P.D. Maryanchuk
Affiliations

Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskogo Str., 58012 Chernivtsi, Ukraine

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Issue Volume 9, Year 2017, Number 3
Dates Received 20 February 2017; published online 30 June 2017
Citation H.P. Parkhomenko, M.M. Solovan, P.D. Maryanchuk, J. Nano- Electron. Phys. 9 No 3, 03024 (2017)
DOI 10.21272/jnep.9(3).03024
PACS Number(s) 73.40. – c
Key words Heterostructure (6) , Thin film (83) , Charge transport mechanisms, NiO (11) , Si (402) .
Annotation Heterostructure p-NiO/n-Si was fabrication by reactive magnetron sputtering thin films nickel oxide on substrates with crystal n-Si.The influence of treatment Si substrate on electrical properties of heterostructures was shown. Studied their dark current-voltage characteristics at room temperature. It was established that the main transfer mechanisms in the forward bias is a multi-step tunneling current transfer mechanism involving surface states at the interface between the p-NiO / n-Si and tunneling, under reverse bias - tunneling and emission of Frenkel-Poole.

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