Raman Study of CVD Graphene Irradiated by Swift Heavy Ions

Author(s) E.A. Kolesov1, M.S. Tivanov1, O.V. Korolik1, P. Yu. Apel2,3, V.A. Skuratov2,3,4, A.M. Saad5, I.V. Komissarov6, A. Swic7, P.V. Żukowski8, T.N. Koltunowicz8

1 Belarusian State University, 4, Nezavisimosti Ave., 220030 Minsk, Belarus

2 Joint Institute for Nuclear Research, 6, Joliot-Curie, 141980 Dubna, Russia

3 Dubna State University, 141980 Dubna, Russia

4 National Research Nuclear University MEPhI, Moscow, Russia

5 Al-Balqa Applied University, PO Box 4545, 11953 Amman, Jordan

6 Belarusian State University of Informatics and Radioelectronics, 6, P. Brovka Str., 220013 Minsk, Belarus

7 Institute of Technological Systems of Information, Lublin University of Technology, 20-618 Lublin, Poland

8 Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 20-618 Lublin, Poland

Е-mail tivanov@bsu.by, t.koltunowicz@pollub.pl
Issue Volume 9, Year 2017, Number 3
Dates Received 28 February 2017; revised manuscript received 19 March 2017; published online 30 June 2017
Citation E.A. Kolesov, M.S. Tivanov, O.V. Korolik, et al., J. Nano- Electron. Phys. 9 No 3, 03020 (2017)
DOI 10.21272/jnep.9(3).03020
PACS Number(s) 81.05.ue, 61.48.Gh, 78.30.Ly, 61.80. – x
Key words Irradiated graphene, Defects (10) , Raman spectroscopy (15) , CVD (19) , Swift heavy ions (2) .
Annotation CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2) and characterized by Raman spectroscopy. The defectiveness of pristine graphene was found to be dominated by grain boundaries while after irradiation it was determined by both grain boundaries and vacancies. Respectively, average inter-defect distance decreased from ~ 24 to ~ 13 nm. Calculations showed that the ion irradiation resulted in a decrease in charge carrier mobility from ~ 4.0 × 103 to ~ 1.3•103 cm2/V s. The results of the present study can be used to control graphene structure, especially vacancies concentration, and charge carrier mobility.