Magnetic and Electric Properties of Semiconduter Bismuth tri Sulphide (Bi2S3) Grown by gel Method

Author(s) T.K. Patil1, K.B. Saraf2
Affiliations

1 Smt. G.G. Khadse Science, Arts and Com. College, Muktainagar – 425 306, India

2 Pratap College, Amalner – 425 401, India

Е-mail tkp.pratik@gmail.com
Issue Volume 3, Year 2011, Number 1, Part 3
Dates Received 04 February 2011, published online 23 June 2011
Citation T.K. Patil, K.B. Saraf, J. Nano- Electron. Phys. 3 No1, 610 (2011)
DOI
PACS Number(s) 68.37.Hk, 75.40.Cx
Key words Gel grown Bi2S3 crystals, Magnetic susceptibility, Electrical conductivity (8) , EDAX and SEM.
Annotation
In the present investigation, crystals of bismuth Tri Sulphide (Bi2S3) were grown by a simple gel technique using single diffusion method. The optimum growth conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of reactant etc. Gel was prepared by mixing sodium meta silicate (Na2SiO35H2O), glacial acetic acid (CH3COOH) and supernant bismuth chloride (BiCl3) at pH value 4.4 and transferred in glass tube of diameter 2.5 cm and 25 cm in length. The mouth of test tube was covered by cotton plug and kept it for the setting. After setting the gel, it was left for aging. After 13 days duration the second supernant H2S water gas solution was poured over the set gel by using pipette then it was kept undisturbed. After 72 hours of pouring the second supernatant, the small nucleation growth was observed at below the interface of gel. The good quality Orthorhombic or Rhombus Bi2S3 crystals were grown in 31 days. These grown crystals were characterized by Magnetic Susceptibility, Electrical Conductivity, EDAX and SEM.

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