Growth Structural and Optical Properties of the Thermally Evaporated tin Diselenide (SnSe2) Thin Films

Author(s) R. Sachdeva1 , M. Sharma1, A. Devi1, U. Parihar1 , N. Kumar1 , N. Padha1 , C.J. Panchal2
Affiliations

1 University of Jammu, Baba Sahib Ambedker Road, 180006, Jammu Tawi, India

2 M. S. University of Baroda 390001, Vadodara, India

Е-mail nareshpadha@yahoo.com
Issue Volume 3, Year 2011, Number 1, Part 3
Dates Received 04 February 2011, in final form 19 June 2011, published online 23 June 2011
Citation R. Sachdeva, M. Sharma, A. Devi, J. Nano- Electron. Phys. 3 No1, 507 (2011)
DOI
PACS Number(s) 68.37. Hk, 81.15.Ef, 68.55.aq, 78.66. – w, 61.05.C –
Key words SnSe2, Thin films (51) , Thermal evaporation (8) , SEM (88) , XRD (47) , Tramsmittance measurements.
Annotation
Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction and Scanning Electron Microscopy (SEM) were used to examine structure and surface morphology of the films. The investigations show that the films grown above 150 °C are single phase and polycrystalline in nature. VIS-IR Spectra of the films were recorded in the wavelength range 380 nm to 1300 nm. The data has been analyzed to find optical parameters like absorption coefficient and energy bandgap.

Links