Growth Structural and Optical Properties of the Thermally Evaporated tin Diselenide (SnSe2) Thin Films

Author(s) R. Sachdeva1 , M. Sharma1, A. Devi1, U. Parihar1 , N. Kumar1 , N. Padha1 , C.J. Panchal2

1 University of Jammu, Baba Sahib Ambedker Road, 180006, Jammu Tawi, India

2 M. S. University of Baroda 390001, Vadodara, India

Issue Volume 3, Year 2011, Number 1, Part 3
Dates Received 04 February 2011, in final form 19 June 2011, published online 23 June 2011
Citation R. Sachdeva, M. Sharma, A. Devi, J. Nano- Electron. Phys. 3 No1, 507 (2011)
PACS Number(s) 68.37. Hk, 81.15.Ef,, 78.66. – w, 61.05.C –
Key words SnSe2, Thin films (51) , Thermal evaporation (8) , SEM (88) , XRD (47) , Tramsmittance measurements.
Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction and Scanning Electron Microscopy (SEM) were used to examine structure and surface morphology of the films. The investigations show that the films grown above 150 °C are single phase and polycrystalline in nature. VIS-IR Spectra of the films were recorded in the wavelength range 380 nm to 1300 nm. The data has been analyzed to find optical parameters like absorption coefficient and energy bandgap.