Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D

Author(s) Boukais Meriem1, B. Dennai2, A. Ould-Abbas1

1 Research Unit of Materials and Renewable Energies (URMER), University Abou Bakr Belkaid, B.P. 119, Tlemcen, Algeria

2 University Center Naama, BP 66, 45000 Naama DZA, Algeria

Е-mail meri_232000@yahoo.fr, deennai_benmoussa@yahoo.com
Issue Volume 7, Year 2015, Number 3
Dates Received 01 May 2015; published online 20 October 2015
Citation Boukais Meriem, B. Dennai, A. Ould-Abbas, J. Nano- Electron. Phys. 7 No 3, 03015 (2015)
PACS Number(s) 88.40.H –, 87.17.Aa
Key words SiGe (3) , AMPS-1D (7) , Emitter, Simulation (27) , Conversion (6) , Efficiency (15) .
Annotation The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper, we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure) developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications.