Impurity Influence on Nitride LEDs

Author(s) O.I. Rabinovich , S.A. Legotin , S.I. Didenko
Affiliations

NIST “Moscow Institute of Steel and Alloys”, 4, Leninskiy Pr., 119040 Moscow, Russian Federation

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Issue Volume 6, Year 2014, Number 3
Dates Received 19 May 2014; revised manuscript received 01 July 2014; published online 15 July 2014
Citation O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)
DOI
PACS Number(s) 07.05.Tp, 85.60.Jb
Key words Light emitting diode, AlGaInN, Simulation (28) , Quantum efficiency (3) .
Annotation Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quantum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN heterostructure LEDs characteristics could be improved.

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