The Study of Microstructure of III-V Polar on Non-Polar Heterostructures by HRXRD

Author(s) Ravi Kumar , Tapas Ganguli, Vijay Chouhan, V.K. Dixit
Affiliations Raja Ramanna Centre for Advanced Technology, 452013, Indore, India
Е-mail ravi@rrcat.gov.in
Issue Volume 3, Year 2011, Number 1, Part 1
Dates Received 04 February 2011, in final form 21 March 2011, published online 22 March 2011
Citation Ravi Kumar, Tapas Ganguli, Vijay Chouhan, V.K. Dixit, J. Nano- Electron. Phys. 3 No1, 17 (2011)
DOI
PACS Number(s) 61.05.cp, 81.05.Ea
Key words HRXRD (3) , GaAs/Si, Antiphase domains, Microstructure (19) , Mismatched epitaxy.
Annotation
In this article, we report on the detailed high resolution x-ray diffraction data analysis of three GaAs films deposited by metal organic vapour phase epitaxy on Si substrates. In the GaAs/Si films the effect of anti phase domains is seen by the selective broadening of (002) and (006) reflections. Further as the (006) reflection is a very weak reflection, such films cannot be analyzed by conventional Williamson-Hall plots using (002), (004) and (006) reflections. We find that using (111), (333) and (444) reflections it is possible to use the standard Williamson-Hall analysis and extract parameters related to the microstructure of the films. We have also carried out the analysis to determine the tilt and twist between the mosaic blocks after correcting for the effects of the finite lateral coherence length.

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