Detrmination of the Si-PIn Detector Active Zone Thickness Using Analytic Line Intensity Wavelength Dependence of the Single-Component Standards

Author(s) А.А. Mamaluy, L.P. Fomina, A.I. Mikhailov
Affiliations National Technical University “Kharkiv Polytechnical Institute” 21, Frunze Str., 61002, Kharkov, Ukraine
Е-mail m_if@ukr.net
Issue Volume 2, Year 2010, Number 4
Dates Received 23 December 2010, in final form 15 January 2011
Citation А.А. Mamaluy, L.P. Fomina, A.I. Mikhailov, J. Nano- Electron. Phys. 2 No4, 169 (2010)
DOI
PACS Number(s) 07.85.Fv
Key words X-ray fluorescent radiation, Analytical lines, Detector (7) , Active zone, Secondary radiator.
Annotation
The simple procedure of the detector active zone thickness determination is proposed, in which the fluxes of fluorescent radiation analytical lines from single-component samples excited by monochromatic radiation of a secondary radiator are used as the known fluxes. The superposition of experimental and calculated curves of the analytical line intensity versus the wavelength allows determination of the active zone thickness d = 170 μm with an accuracy of ± 10 μm.

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