Influence of the Carrier Concentration of Indium Phosphide on the Porous Layer Formation

Author(s) Ya.A. Suchikova1 , V.V. Kidalov1 , G.A. Sukach2
Affiliations

1 Berdyansk State Pedagogical University, 4, Shmidta Str., Berdyansk, 71118, Ukraine

2 V. Lashkaryov Institute of Semiconductor Physics NASU, 41, Nauki Ave., Kiev, 03028, Ukraine

Е-mail yanasuchikova@mail.ru
Issue Volume 2, Year 2010, Number 4
Dates Received 06 October 2010, in final form 08 January 2011
Citation Ya.A. Suchikova, V.V. Kidalov, G.A. Sukach, J. Nano- Electron. Phys. 2 No4, 142 (2010)
DOI
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Key words Porous InP, Scanning electron microscopy (14) , Electrochemical etching, Nanostructure (17) , Segregation.
Annotation This paper presents experimental results demonstrating the influence of the doping level of InP on the porous layer formation on its surface during the electrochemical etching. It is established that the more high-quality porous layers are formed using the crystals with the free carrier concentration of 2,3 × 1018 cm–3. The observation results of InP layered heterogeneity are discussed and explained in terms of the features of the growing process of heavily doped crystals.

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