Simulation of CIGS Thin Film Solar Cells Using AMPS-1D
| Автори | J.R. Ray1 , C.J. Panchal1 , M.S. Desai1 , U.B. Trivedi2 |
| Приналежність | 1 Applied Physics Department, Faculty of Technology and Engineering. M. S. University of Baroda, Vadodara-390001, India 2 Department of Electronics, Sardar Patel University, Vallabh Vidhyanagar-380120, India |
| Е-mail | cjpanchal_msu@yahoo.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 4 |
| Дати | Received 04 February 2011, in final form 14 October 2011, published online 17 October 2011 |
| Посилання | J.R. Ray, C.J. Panchal, M.S. Desai, U.B. Trivedi, J. Nano- Electron. Phys. 3 No1, 747 (2011) |
| DOI | |
| PACS Number(s) | 78.20.Bh, 73.40.Lq, 84.60.Jt |
| Ключові слова | CIGS thin film (2) , AMPS-1D simulation, Conversion efficiency (4) , Quantum efficiency (3) . |
| Анотація |
The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE). |
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Перелік посилань |
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