Comparative Study of Semiconductors Bismuth Iodate, Bismuth Triiodide and Bismuth Trisulphide Crystals
| Authors | T.K. Patil1, M.I. Talele2 |
| Affiliations | 1 Smt G.G. Khadse Science, Arts College, Muktainagar, 425306 India 2 P. O. Nahata College, Bhusawal, 425201 India |
| Е-mail | tkp.pratik@gmail.com |
| Issue | Volume , Year , Number |
| Dates | Received 20 March 2012; published online 29 December 2012 |
| Citation | T.K. Patil, M.I. Talele, J. Nano- Electron. Phys. 4 No 4, 04003 (2012) |
| DOI | |
| PACS Number(s) | 72.20. – i, 82.70.Gg, 61.05.C – |
| Keywords | Gel grown [Bi(IO3)3], BiI3 and Bi2S3 Crystals, XRD (90) , FTIR (29) , Chemical analysis and electrical conductivity. |
| Annotation |
In the present investigation, crystals of Bismuth Iodate[Bi(IO3)3], Bismuth Iodide[BiI3] and Bismuth- Tri Sulphide [Bi2S3] were grown by a simple gel technique using single diffusion method. The optimum growth conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of reactant etc. Gel was prepared by mixing sodium meta silicate (Na2SiO35H2O), glacial acetic acid (CH3COOH) and supernant bismuth chloride (BiCl3) at pH value 4.4 and transferred in glass tube of diameter 2.5 cm and 25 cm in length. The mouth of test tube was covered by cotton plug and kept it for the setting. After setting the gel, it was left for aging. After 13 days duration the second supernant K(IO3), KI3 and H2S water gas solution was poured over the set gel by using pipette then it was kept undisturbed. After 72 hours of pouring the second supernatant, the small nucleation growth was observed at below the interface of gel. The good quality crystals of [Bi(IO3)3], [BiI3] and [Bi2S3] were grown. These grown crystals were characterized by XRD, FTIR, Chemical Analysis and Electrical Conductivity. |
|
List of References |
Other articles from this number
1) Irradiation Effects on Microstructure and Dielectric Properties of Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] Thin Films [04001-1-04001-4]2) Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering [04002-1-04002-4]
3) Nonlinear Optical Rectification of Confined Exciton in a ZnO/ZnMgO Strained Quantum Dot [04004-1-04004-5]
4) Preparation and Characterization of Thermally Evaporated Octa Substituted Zinc Phthalocyanine Thin Films [04005-1-04005-5]
5) Optical Properties of MEH-PPV and MEH-PPV/ [6,6]-Phenyl C61-butyric Acid 3-ethylthiophene Ester Thin Films [04006-1-04006-4]
6) Maximum and Minimum Transmittance of a Structure Containing N-Identical Pairs of Left- and Right-Handed Materials [04007-1-04007-5]
7) Study of Some Optical Properties of Mixed SnO2-CuO Thin Films [04008-1-04008-4]
8) Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [04009-1-04009-4]
9) Superconducting State Parameters of Bulk Amorphous Alloys [04010-1-04010-3]
10) Adiabatic, Non-Isothermal Plume Expansion into Vacuum in Terms of Knudsen Layer [04011-1-04011-3]
11) Two Dimensional Coulomb Potential of Confined Excitons in Quantum Well Structures [04012-1-04012-5]
12) Study of Growth, EDAX, Optical properties and Surface Morphology of Zinc Tartrate Crystals [04013-1-04013-4]
13) Peculiarities of the Dependence of the Strain Coefficient on the Deformation of Metal Films [04014-1-04014-4]
14) Cluster Beams Sources. Part 2. The Formation of Cluster Beams in Nozzle Sources [04015-1-04015-15]
15) Cluster Beams Sources. Part 2. The Formation of Cluster Beams in Nozzle Sources [04015-1-04015-15]
16) Preparation and optical properties of ZnSe films [04016-1-04016-5]
