Nanostructured NaBiTe2 Thin Films and Their Properties
| Authors | V.I. Bilozertseva1, D.A. Gaman1, H.M. Khlyap2, A.A. Mamalui1, N.L. Dyakonenko1, L.G. Petrenko1 |
| Affiliations | 1 National Technical University "Kharkov Polytechnical Institute", 21 Frunze str., Kharkov, 61002 Ukraine 2 University of Technology, Distel str. 11, D-67657 Kaiserslautern, Germany |
| Е-mail | biloz@mail.ru |
| Issue | Volume 4, Year 2012, Number 1 |
| Dates | Received 06 November 2011; published online 14 March 2012 |
| Citation | V.I. Bilozertseva, D.A. Gaman, H.M. Khlyap, et al. J. Nano-Electron. Phys. 4 No 1, 01019 (2012) |
| DOI | |
| PACS Number(s) | 8.55.ag, 72.80.Jc |
| Keywords | Thin films (60) , Chalcogenide (14) , NaBiTe2, Structure (105) , Surface relief, Optical transmission, Electric properties (9) , Current mechanisms, Gas sensitivity. |
| Annotation | The paper reports our experimental data on growth, morphology, optical and electrophysical properties of NaBiTe2 thin films grown by thermal evaporation in vacuum. The structural characteristics and electric field-induced properties of semiconductor NaBiTe2 films with Cr contacts are investigated. Room-temperature time dependence of the current flowing through the investigated structures under applied electric field is also discussed. The influence of some aggressive atmospheric impurities on NaBiTe2 films characteristics is described for the first time. |
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List of References |
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