Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions
| Authors | V.A. Skryshevsky1 , O.M. Kostiukevych2 , V.V. Lendiel3, O.V. Tretyak1 |
| Affiliations | 1 Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine 2 Faculty of Radiophysics Electronics and Computer systems, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine 3 Faculty of Mechanics and Mathematics, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine |
| Е-mail | mirror@ukr.net |
| Issue | Volume 9, Year 2017, Number 1 |
| Dates | Received 13 November 2016; revised manuscript received 09 Ferbuary 2017; published online 20 February 2017 |
| Citation | V.A. Skryshevsky, O.M. Kostiukevych, V.V. Lendiel, O.V. Tretyak, J. Nano- Electron. Phys. 9 No 1, 01023 (2017) |
| DOI | 10.21272/jnep.9(1).01023 |
| PACS Number(s) | 73.40.Lq, 73.50.Pz |
| Keywords | Memristor (4) , Titanium oxide, Schottky barrier (8) , Surface electronic states. |
| Annotation | In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area electronics, compatible with Si CMOS process and can be managed by external illumination. |
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