Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions

Author(s) V.A. Skryshevsky1, O.M. Kostiukevych2, V.V. Lendiel3, O.V. Tretyak1
Affiliation(s)

1 Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

2 Faculty of Radiophysics Electronics and Computer systems, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

3 Faculty of Mechanics and Mathematics, Taras Shevchenko National University of Kyiv, 64, Volodymyrska st., 01601 Kyiv, Ukraine

Е-mail mirror@ukr.net
Issue Volume 9, Year 2017, Number 1
Dates Received 13 November 2016; revised manuscript received 09 Ferbuary 2017; published online 20 February 2017
Citation V.A. Skryshevsky, O.M. Kostiukevych, V.V. Lendiel, O.V. Tretyak, J. Nano- Electron. Phys. 9 No 1, 01023 (2017)
DOI 10.21272/jnep.9(1).01023
PACS Number(s) 73.40.Lq, 73.50.Pz
Key words Memristor (3) , Titanium oxide, Schottky barrier (8) , Surface electronic states.
Abstract In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area electronics, compatible with Si CMOS process and can be managed by external illumination.

References