Growth Structural and Optical Properties of the Thermally Evaporated tin Diselenide (SnSe2) Thin Films
| Authors | R. Sachdeva1 , M. Sharma1, A. Devi1, U. Parihar1 , N. Kumar1 , N. Padha1 , C.J. Panchal2 |
| Affiliations | 1 University of Jammu, Baba Sahib Ambedker Road, 180006, Jammu Tawi, India 2 M. S. University of Baroda 390001, Vadodara, India |
| Е-mail | nareshpadha@yahoo.com |
| Issue | Volume 3, Year 2011, Number 1, Part 3 |
| Dates | Received 04 February 2011, in final form 19 June 2011, published online 23 June 2011 |
| Citation | R. Sachdeva, M. Sharma, A. Devi, J. Nano- Electron. Phys. 3 No1, 507 (2011) |
| DOI | |
| PACS Number(s) | 68.37. Hk, 81.15.Ef, 68.55.aq, 78.66. – w, 61.05.C – |
| Keywords | SnSe2, Thin films (60) , Thermal evaporation (10) , SEM (112) , XRD (90) , Tramsmittance measurements. |
| Annotation |
Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction and Scanning Electron Microscopy (SEM) were used to examine structure and surface morphology of the films. The investigations show that the films grown above 150 °C are single phase and polycrystalline in nature. VIS-IR Spectra of the films were recorded in the wavelength range 380 nm to 1300 nm. The data has been analyzed to find optical parameters like absorption coefficient and energy bandgap. |
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List of References |
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