Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
| Authors | Rajesh Singh , Radha Srinivasan |
| Affiliations | Department of Physics, University of Mumbai, Santacruz (East), 400098 Mumbai, India |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 2 |
| Dates | Received 20 October 2016; published online 21 June 2016 |
| Citation | Rajesh Singh, Radha Srinivasan, J. Nano- Electron. Phys. 8 No 2, 02036 (2016) |
| DOI | 10.21272/jnep.8(2).02036 |
| PACS Number(s) | 68.37.Ps, 73.50. – h |
| Keywords | CdSe thin films (2) , SHI (23) , XRD (90) , AFM (18) , I-V (25) . |
| Annotation | Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence. |
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List of References |
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