Analysis of High Energy Ion, Proton and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz Sige HBTS
| Authors | K.C. Praveen1, N. Pushpa1, J.D. Cressler2, A.P. Gnana Prakash1 |
| Affiliations | 1 Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, India 2 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30302, Georgia, USA |
| Е-mail | kcpavi@gmail.com |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, in final form 29 April 2011, published online 08 May 2011 |
| Citation | K.C. Praveen, N. Pushpa, J.D. Cressler, et al., J. Nano- Electron. Phys. 3 No1, 348 (2011) |
| DOI | |
| PACS Number(s) | 72.20.Jv, 61.82.Fk, 61.80.Ed |
| Keywords | 200 GHz SIGE HBT, Co-60 gamma, Proton (2) , Lithium ion irradiation, EB spacer oxide, STI oxide. |
| Annotation |
Third generation advanced Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were exposed to different radiations like 50 MeV lithium ions, 63 MeV proton and Co-60 gamma radiation in the dose range of 300 krad to 10 Mrad. The DC electrical characteristics like forward mode Gummel characteristics, inverse mode Gummel characteristics, excess base current, current gain, neutral base recombination, avalanche multiplication and output characteristics were measured before and after irradiation for three different radiations and the results are compared in this paper. The results show that the Li + ions impart more energy and create significant amount of damage in the surface and bulk of the transistor when compared to gamma and proton irradiation. |
|
List of References |
Other articles from this number
1) Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films [0225-0231]2) Electrophysical Properties of Ge/Cr Thin Films [0232-0235]
3) Double Acceptor Interaction in Semimagnetic Quantum Dot [0236-0239]
4) Elastic Constants and Its Pressure Derivative of Boron Phosphide Using Higher-Order Perturbation Theory [0240-0242]
5) Review of MEMS Test Structures for Mechanical Parameter Extraction [0243-0253]
6) Synthesis, Structural and Optical Study of CdS Nanoparticles Doped With Different Concentration of Cu [0254-0259]
7) Effect of Annealing on Structural, Optical and Electrical Behaviours of WO3 Thin Films Prepaired by Physical Vapour Deposition Method [0260-0267]
8) Electronic Structure and Magnetic Properties of Cobalt Doped Zinc Oxide [0268-0273]
9) Structural and Substructural Properties of the Zinc and Cadmium Chalcogenides Thin Films (a Review) [0274-0301]
10) Structural Investigation of Sbgese Glasses by High Resolution X-Ray Photoelectron Spectroscopy [0302-0307]
11) Thermal and Dielectric Studies on Ge10Se69Tl21 Chalcogenide Glass [0308-0312]
12) Optical Band Gap Study of Bi1-xSbx (x = 0.10, 0.15 & 0.20) Thin Films [0313-0317]
13) Comparison of Thermal Evaporation and Plasma Assisted Thermal Evaporation Processes for Deposition of tin Oxide Thin Films [0318-0322]
14) Correlation of Raman and Photoluminescence Spectra of Al2O3 Capped Silicon Nanoparticles Grown by Reactive Pulsed Laser Deposition [0323-0329]
15) Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor [0330-0340]
16) Electronic Properties of Tin Telluride: a First Principles Study [0341-0347]
17) Field-Emission Study of Multi-Walled Carbon Nanotubes Grown on Si Substrate by Low Pressure Chemical Vapor Deposition [0358-0361]
18) Optical and Electrochromic Properties of E-Beam Evaporated Nickel Oxide Thin Film [0362-0369]
19) Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at low Power Plasma [0370-0375]
20) P-Type Transparent nio Thin Films by E-Beam Evaporation Techniques [0376-0383]
21) Excited States of a Magnetic Polaron in a Quantum Well [0383-0387]
22) Temperature Induced Stress Dependent Photoluminescence Properties of Nanocrystallite Zinc Oxide [0388-0395]
23) Magnetic, Electrical and Surface Morphological Characterization of AuGe/Ni/Au Ohmic Contact Metallization on GaAs/AlGaAs Multilayer Structures [0396-0403]
24) Thermal and Optical Study of Te15(Se100-xBix)85 (x = 0, 1, 3) Chalcogenide Glasses [0404-0408]
25) Zinc Oxide Nanostructures by Oxidation of Zinc Films Deposited on Oxidized Silicon Substrate [0409-0413]
26) Micro-Raman and UV-Vis Studies of 100 MEv Ni4+ Irradiated Cadmium Telluride Thin Films [0414-0417]
27) The Silicon-to-Silicon Anodic Bonding Using Sputter Deposited Intermediate Glass Layer [0418-0425]
28) low Temperature Effects on Electrical and Optical Properties of Vacuum Annealed Zinc Tetra- Tert- Butyl 2, 3 Naphthalocyanine Thinfilms [0426-0432]
29) Effect of Additives on Grain Size and Ammonia Sensing Properties of Sprayed Pure and CuO Modified ZnO Thin Films [0433-0440]
