An Experimental Insight into the ZnO Thin Films Properties Prepared by Dip Coating Technique
| Authors | M. Benhaliliba1 , Y.S. Ocak2 |
| Affiliations | 1 Material Technology Department, Physics Faculty, USTOMB University, BP1505 Oran, Algeria 2 Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 1 |
| Dates | Received 04 August 2015; revised manuscript received 02 March 2016; published online 15 March 2016 |
| Citation | M. Benhaliliba, Y.S. Ocak, J. Nano- Electron. Phys. 8 No 1, 01040 (2016) |
| DOI | 10.21272/jnep.8(1).01040 |
| PACS Number(s) | 77.84.Bw, 68.47.Gh |
| Keywords | Zinc oxide (10) , Film synthesis, Metal doping, Dip coating (4) , Structural parameters (5) , Transmittance (7) , Optical band gap (7) , Resistivity (11) . |
| Annotation | The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on X-ray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films ( 80 %) and optical band gap. Using the Hall Effect measurement (HMS) in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity. |
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